Numerical Exploration of Electronic, Dynamic And Optical Properties of ini-agbr Heterostructure For Optoelectronic Application
DOI:
https://doi.org/10.51459/jostir.2025.1.2.0144Keywords:
bandgap, optoelectronics, extinction index, heterostructureAbstract
Innovation in technology has been influenced by optoelectronic devices and their applications, with silicon playing a major role. Advanced functionalities, including high density data storage, efficient energy harvesting etc has necessitated the search for novel materials. Heterostructure formation is a newer method for developing semiconductor of better functionality. The calculation of the electronic structure, optical properties, and dynamic stability of a non-silicon material (InI-AgBr heterostructure) are reported. Like silicon, the aim is to evaluate the prospect of InI-AgBr heterostructure for photovoltaic energy harvesting. The results predict InI-AgBr single-layer heterostructure to be an indirect bandgap semiconductor (Eg ≈ 1.120 eV) with an effective interlayer distance of 0.4046 nm. The optoelectronic indices, including extinction coefficient and the electron energy loss are excellent compared to that of silicon. The calculated refractive index is 4.75, much above the threshold value of 1, while the absorption coefficient is good and predicted to increase with additional heterostructure layers. Overall, InI-AgBr single-layer heterostructure is predicted to be a valuable semiconductor for optoelectronic device fabrication.
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